CTLT853-M833 Datasheet | Central Semiconductor

.Data Sheet.co.kr CTLT853-M833 SURFACE MOUNT HIGH CURRENT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80% smaller than a parible SOT-223 device. This leadless package design has a watts per unit area at least twice that of equivalent package devices. MARKING CODE: CHA3 - PNP plement: CTLT953-M833 TLM833 CASE Features : - High Voltage (200V) - High Thermal Efficiency - High Current (IC=6.0A) - 3 x 3mm TLM™ case - Low VCE(SAT) = 340m V MAX @ 5.0A MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) Thermal Resistance (Note 2) Thermal Resistance (Note 3) SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA ΘJA ΘJA 200 100 6.0 6.0 4.5 4.0 2.5 -65 to +150 27.78 31.25 50.00 UNITS V V V A W W W °C °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=150V ICBO VCB=150V, TA=100°C ICER VCE=150V, RBE≤1.0kΩ IEBO VEB=6.0V BVCBO IC=100μA 200 220 BVCER IC=10m A, RBE≤1.0kΩ 200 210 BVCEO IC=10m A 100 110 BVEBO IE=100μA 6.0 8.0 VCE(SAT) IC=100m A, IB=5.0m A 22 VCE(SAT) IC=2.0A, IB=100m A 135 VCE(SAT) IC=5.0A, IB=500m A VBE(SAT) IC=5.0A, IB=500m A Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm2 MAX 10 1.0 10 10 50 170 340 1.25 UNITS n A μA n A n A V V V V m V m V m V V R1 (17-February 2010) Datasheet pdf - http://..net/ ....