CTLT953-M833 Datasheet | Central Semiconductor

.Data Sheet.co.kr CTLT953-M833 SURFACE MOUNT HIGH CURRENT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLT953-M833 is a high performance 5.0A High Current PNP Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80% smaller than a parible SOT-223 device. This leadless package design has a watts per unit area at least twice that of equivalent package devices. MARKING CODE: CHA4 - NPN plement: CTLT853-M833 TLM833 CASE Features : - High Voltage (140V) - High Thermal Efficiency - High Current (IC=5.0A) - 3 x 3mm TLM™ case - Low VCE(SAT) = 420m V MAX @ 4.0A MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation (Note 1) Power Dissipation (Note 2) Power Dissipation (Note 3) Operating and Storage Junction Temperature Thermal Resistance (Note 1) Thermal Resistance (Note 2) Thermal Resistance (Note 3) SYMBOL VCBO VCEO VEBO IC PD PD PD TJ, Tstg ΘJA ΘJA ΘJA 140 100 6.0 5.0 4.5 4.0 2.5 -65 to +150 27.78 31.25 50.00 UNITS V V V A W W W °C °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP ICBO VCB=100V ICBO VCB=100V, TA=100°C ICER VCE=100V, RBE≤1.0kΩ IEBO VEB=6.0V BVCBO IC=100μA 140 170 BVCER IC=10m A, RBE≤1.0kΩ 140 150 BVCEO IC=10m A 100 120 BVEBO IE=100μA 6.0 9.0 VCE(SAT) IC=100m A, IB=10m A 20 VCE(SAT) IC=1.0A, IB=100m A 90 VCE(SAT) IC=2.0A, IB=200m A 170 VCE(SAT) IC=4.0A, IB=400m A 320 VBE(SAT) IC=4.0A, IB=400m A 1.0 Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 75 mm2 (2) FR-4 Epoxy PC Board with copper mounting pad area of 75 mm2 (3) FR-4 Epoxy PC Board with copper mounting pad area of 25 mm2 MAX 50 1.0 50 10 50 120 220 420 1.2 UNITS n A μA n A n A V V V V m V m V m V m V V R1 (17-February...