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CXDM1002N - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

General Description

The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications.

This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current.

Key Features

  • Low rDS(ON) (140mΩ TYP @ VGS=4.5V).
  • High voltage (VDS=100V).
  • Logic level compatibility.
  • 2kV ESD protection.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM1002N is a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low rDS(ON), low threshold voltage, and low leakage current. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (140mΩ TYP @ VGS=4.