CXDM3069N Key Features
- Low rDS(ON) (50mΩ MAX @ VGS=2.5V)
- High current (ID=6.9A)
- Logic level patibility
- MECHANICAL OUTLINE
- Part: CXDM3069N
- Manufacturer: Central Semiconductor (official site)
- Size: 131.64 KB
Related Central Semiconductor Datasheets
| Part Number | Description |
|---|---|
| CXDM1002N | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CXDM4060P | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CXDM6053N | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
CXDM3069N Description
The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS:.