Datasheet4U Logo Datasheet4U.com

CXDM3069N - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

General Description

The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.

Load/

Key Features

  • Low rDS(ON) (50mΩ MAX @ VGS=2.5V).
  • High current (ID=6.9A).
  • Logic level compatibility.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CXD101-106Q CMOS Digital Delay Line ETC
CXD104-114Q C-MOS MEMORY SEQUENCER ETC
CXD1088AQ Over Sampling Digital Filter Sony
CXD1095AR CMOS I/O Expander ETC
CXD1095Q CMOS I/O Port Expander ETC

Other Datasheets by Central Semiconductor

Part Number Description
CXDM1002N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CXDM4060P SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
CXDM6053N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CXDM3069N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MARKING: FULL PART NUMBER FEATURES: • Low rDS(ON) (50mΩ MAX @ VGS=2.5V) • High current (ID=6.