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CXDM4060P - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

General Description

The CENTRAL SEMICONDUCTOR CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications.

Key Features

  • high current, low rDS(ON), low threshold voltage, and low gate charge. SOT-89 CASE.

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Full PDF Text Transcription (Reference)

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CXDM4060P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low rDS(ON), low threshold voltage, and low gate charge. SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MARKING: FULL PART NUMBER FEATURES: • Low rDS(ON) (48mΩ TYP @ VGS=10V) • High current (ID=6.