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CXDM6053N - SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current.

Load/

Features

  • Low rDS(ON) (52mΩ MAX @ VGS=4.5V).
  • High current (ID=5.3A).
  • Logic level compatibility.

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Datasheet Details

Part number CXDM6053N
Manufacturer Central Semiconductor
File Size 131.72 KB
Description SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet download datasheet CXDM6053N Datasheet
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CXDM6053N SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment MARKING: FULL PART NUMBER FEATURES: • Low rDS(ON) (52mΩ MAX @ VGS=4.5V) • High current (ID=5.
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