DESCRIPTION
: The CENTRAL SEMICONDUCTOR MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS
: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 160 150 5.0 600 1.2 -65 to +150 104 UNITS V V V mA W °C °C/W ELECTRICAL CHARACTERISTICS
: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=120V ICBO IEBO VCB=120V, TA=100°C VEB=3.0V BVCBO IC=100μA 160 BVCEO IC=1.0mA 150 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=1.0mA VCE(SAT) IC=50mA, IB=5.0mA VBE(SAT) IC=10mA, IB=1.0mA VBE(SAT) IC=50mA, IB=5.0mA hFE VCE=5.0V, IC=1.0mA 50 hFE VCE=5.0V, IC=10mA 60 hFE VCE=5.0V, IC=50mA 50 fT VCE=10V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz hfe VCE=10V, IC=1.0mA, f=1.0kHz 40 NF VCE=5.0V, IC=250μA, RS=1.0kΩ, f=10Hz to 15.7kHz MAX 50 50 50 0.2 0.5 1.0 1.0 240 300 6.0 200 8.0 UNITS nA μA nA V V V V V V V MHz pF dB...
Central Semiconductor
