CXDM3069N Description
The CENTRAL SEMICONDUCTOR CXDM3069N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS:.
CXDM3069N Key Features
- Low rDS(ON) (50mΩ MAX @ VGS=2.5V)
- High current (ID=6.9A)
- Logic level patibility
- MECHANICAL OUTLINE