CXDM6053N Description
The CENTRAL SEMICONDUCTOR CXDM6053N is a high current N-channel enhancement-mode silicon MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low rDS(ON), low threshold voltage, and low leakage current. SOT-89 CASE APPLICATIONS:.
CXDM6053N Key Features
- Low rDS(ON) (52mΩ MAX @ VGS=4.5V)
- High current (ID=5.3A)
- Logic level patibility
- MECHANICAL OUTLINE