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CEM8531 - Dual P-Channel MOSFET

Download the CEM8531 datasheet PDF. This datasheet also covers the CEM8531-Chino variant, as both devices belong to the same dual p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 60mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEM8531-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEM8531
Manufacturer Chino-Excel Technology
File Size 84.50 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet CEM8531 Datasheet

Full PDF Text Transcription for CEM8531 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CEM8531. For precise diagrams, and layout, please refer to the original PDF.

CEM8531 Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 60mΩ @VGS = -4.5V. Super high dense cell desig...

View more extracted text
@VGS = -10V. RDS(ON) = 60mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -5.9 -20 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b S

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