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CEP06N5 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the CEP06N5, a member of the CEP06N5_Chino N-Channel Logic Level Enhancement Mode Field Effect Transistor family.

Datasheet Summary

Features

  • 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. 4 4 D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S.

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Datasheet preview – CEP06N5

Datasheet Details

Part number CEP06N5
Manufacturer Chino-Excel Technology
File Size 41.67 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet CEP06N5 Datasheet
Additional preview pages of the CEP06N5 datasheet.

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Full PDF Text Transcription

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CEP06N5/CEB06N5 Oct. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 500V , 6.6A , RDS(ON)=1Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. 4 4 D G D G G D S S CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 500 Unit V V A A A W W/ C C Ć 30 6.6 20 6.6 104 0.
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