CEP1012 - N-Channel Enhancement Mode Field Transistor

This page provides the datasheet information for the CEP1012, a member of the CEP1012_Chino N-Channel Enhancement Mode Field Transistor family.

Datasheet Summary

Features

120V, 15A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

Chino-Excel Technology

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Datasheet Details

Part number	CEP1012
Manufacturer	Chino-Excel Technology
File Size	364.35 KB
Description	N-Channel Enhancement Mode Field Transistor
Datasheet	CEP1012 Datasheet
Additional preview pages of the CEP1012 datasheet.

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Full PDF Text Transcription

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CEP1012/CEB1012 N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 15A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 120 ±20 15 40 100 0.

Published: Mar 23, 2005 |