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CEP6036 - N-Channel MOSFET

Download the CEP6036 datasheet PDF (CEP6036-Chino included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Features

  • 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CEP6036-Chino-ExcelTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number CEP6036
Manufacturer Chino-Excel Technology
File Size 419.16 KB
Description N-Channel MOSFET
Datasheet download datasheet CEP6036 Datasheet

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Full PDF Text Transcription

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CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 60 VGS ±20 Drain Current-Continuous @ TC = 25 C @ TC = 100 C ID 135 95 Drain Current-Pulsed a IDM 540 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C PD 167 1.
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