PE58120G Datasheet | ChipSourceTek

Description The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 85V, ID = 90A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application 技 - PWM applications - Load switch k - Power management Marking and pin assignment 源特科rce Te DFN5x6-8L 矽 ou Absolute Maximum Ratings (TC=25℃ unless otherwise noted) S Drain-Source Voltage Parameter ip Gate-Source Voltage Drain Current-Continuous h Drain Current-Continuous (TC=100℃) C Pulsed Drain Current (Note 1) Symbol VDS VGS ID ID(TC=100℃) IDM Rating 85 ±20 90 59 270 Unit V V A A A Maximum Power Dissipation Avalanche Energy (L=0.5m H) 441 m J Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case (Note...