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PE58120G - N-Channel Enhancement Mode Power MOSFET

General Description

The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 85V, ID = 90A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE58120G
Manufacturer ChipSourceTek
File Size 1.40 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE58120G Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE58120P N-Channel Power MOSFET
PE58200P N-Channel Enhancement Mode Power MOSFET
PE58200PA N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PE58120G N-Channel Enhancement Mode Power MOSFET Description The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 85V, ID = 90A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.