PE58120P Datasheet | ChipSourceTek

Description The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 85V, ID = 120 A RDS(ON) < 5.4mΩ @ VGS=10V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application - PWM applications - Load switch 技 - Power management Marking and pin assignment 源特科rce Tek TO-263 矽 ou Absolute Maximum Ratings (TC=25℃ unless otherwise noted) Parameter S Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous h Drain Current-Continuous (TC=100℃) C Pulsed Drain Current (Note 1) Symbol VDS VGS ID ID(TC=100℃) IDM Rating 85 ±20 120 80 360 Unit V V A A A Maximum Power Dissipation Avalanche Energy (L=0.5m H) 780 m J Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case (Note...