PE58120P - N-Channel Power MOSFET

Datasheet Summary

Description

The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 85V, ID = 120 A RDS(ON) < 5.4mΩ @ VGS=10V Schematic diagram.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package.

ChipSourceTek

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Datasheet Details

Part number	PE58120P
Manufacturer	ChipSourceTek
File Size	1.57 MB
Description	N-Channel Power MOSFET
Datasheet	PE58120P Datasheet
Additional preview pages of the PE58120P datasheet.

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PE58120P N-Channel Enhancement Mode Power MOSFET Description The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 85V, ID = 120 A RDS(ON) < 5.

Published: Jan 7, 2024 |