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PED2015M - P-Channel Enhancement Mode Power MOSFET

General Description

The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -20V, ID = -40A RDS(ON) < 11mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PED2015M
Manufacturer ChipSourceTek
File Size 803.16 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2015M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PED2015M General Features ● VDS = -20V, ID = -40A RDS(ON) < 11mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-2.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking and pin assignment rceTe PDFN3.3x3.