PED2015M Datasheet | ChipSourceTek

Description The PED2015M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = -20V, ID = -40A RDS(ON) < 11mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-2.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application 技 - PWM applications - Load switch k - Power management Marking and pin assignment 源特科rce Te PDFN3.3x3.3-8L 矽 u Absolute Maximum Ratings (TC=25℃ unless otherwise noted) o Parameter S Drain-Source Voltage Gate-Source Voltage ip Drain Current-Continuous Drain Current-Continuous (TC=100℃) h Pulsed Drain Current (Note 1) C Avalanche Current Symbol VDS VGS ID ID IDM IAS Rating -20 ±12 -40 -27 -100 -22 Unit V V A A A A Avalanche Energy (L=0.5m H) 121 m J Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case RθJC ℃/W TEL: +86-0755-27595155...