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PED20D09M - P-Channel Enhancement Mode Power MOSFET

General Description

The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -18V, ID = -9A RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 30mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PED20D09M
Manufacturer ChipSourceTek
File Size 1.09 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED20D09M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PED20D09M P-Channel Enhancement Mode Power MOSFET Description The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -18V, ID = -9A RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 30mΩ @ VGS=-2.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications k ● Load switch ● Power management Marking and pin assignment rceTe PDFN3.3x3.