PED20D09M
PED20D09M is P-Channel Enhancement Mode Power MOSFET manufactured by ChipSourceTek.
Description
The PED20D09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = -18V, ID = -9A
RDS(ON) < 20mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V RDS(ON) < 30mΩ @ VGS=-2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
Application
技
- PWM applications k
- Load switch
- Power management
Marking and pin assignment
源特科rce Te PDFN3.3x3.3-8L
矽 ou Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Parameter
S Drain-Source Voltage ip Gate-Source Voltage
Drain Current-Continuous h Pulsed Drain Current (Note 1) C Maximum Power Dissipation
Symbol
VDS VGS ID IDM PD
Rating
-18 ±12 -9 -36 12.5
Unit
V V A A W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJC
℃/W
TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://.Chip Source Tek. E-mail: Tony.Wang@.Chip Source Tek. In Fo@Chip Source Tek.
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2021 Apr. v1.0
Electrical Characteristics (TC=25℃ unless otherwise noted)
Parameter...