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PED2420 - N-Channel Enhancement Mode Power MOSFET

General Description

The PED2420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 30V, ID = 8A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 19mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet Details

Part number PED2420
Manufacturer ChipSourceTek
File Size 1.42 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED2420 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PED2420 N-Channel Enhancement Mode Power MOSFET Description The PED2420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 8A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 19mΩ @ VGS=4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking rceTe UDFN2x2-6L u Absolute Maximum Ratings (TA=25℃ unless otherwise noted) o Parameter Drain-Source Voltage S Gate-Source Voltage ip Drain Current-Continuous Drain Current-Continuous (TA=70℃) h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID ID IDM PD Rating 30 ±20 8 6.