PED30D12M Datasheet | ChipSourceTek

Description The PED30D12M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 30V, ID = 12A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application 技 - PWM applications - Load switch k - Power management Marking and pin assignment 源特科rce Te PDFN3.3x3.3-8L 矽 u Absolute Maximum Ratings (TC=25℃ unless otherwise noted) o Drain-Source Voltage Parameter S Gate-Source Voltage Drain Current-Continuous ip Drain Current-Continuous (TC=70℃) Pulsed Drain Current (Note 1) h Single Pulse Avalanche Energy (L=0.1m H) C Maximum Power Dissipation Symbol VDS VGS ID ID IDM EAS PD Rating 30 ±20 12 9 48 24 20.5 Unit V V A A A m J W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJC ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://.Chip Source Tek. E-mail: Tony.Wang@.Chip Source Tek. In Fo@Chip Source Tek. Page...