ChipSourceTek PED30D12M
The PED30D12M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.| Part No. | PED30D12M |
|---|---|
| Datasheet | PED30D12M Download |
| Manufacturer |  ChipSourceTek |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
It can be used in a wide variety of applications.GENERAL FEATURES
● VDS = 30V, ID = 12A RDS(ON) < 14mΩ @ VGS=10V RDS(ON) < 20mΩ @ VGS=4.5V Schematic diagram● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application 技
● PWM applications
● Load switch k
● Power management Marking and pin assignment 源特科rceTe PDFN3.3x3.3-8L 矽 u
ABSOLUTE MAXIMUM RATINGS
(TC=25℃ unless otherwise noted) o Drain-Source Voltage Parameter S Gate-Source Voltage Drain Current-Continuous ip Drain Current-Continuous (TC=70℃) Pulsed Drain Current (Note 1) h Single Pulse Avalanche Energy (L=0.1mH) C Maximum Power Dissipation Symbol VDS VGS ID ID IDM EAS PD Rating 30 ±20 12 9 48 24 20.5 Unit V V A A A mJ W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJC 6 ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB: E-mail: Tony.Wang@.ChipSourceTek.com I...
