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PED30P09M - P-Channel Enhancement Mode Power MOSFET

General Description

The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = -30V, ID = -9A RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PED30P09M
Manufacturer ChipSourceTek
File Size 1.08 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PED30P09M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Power MOSFET Description The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PED30P09M General Features ● VDS = -30V, ID = -9A RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch k ● Power management Marking rceTe PDFN3.3x3.