PED30P09M Datasheet | ChipSourceTek

Description The PED30P09M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = -30V, ID = -9A RDS(ON) < 30mΩ @ VGS=-10V RDS(ON) < 45mΩ @ VGS=-4.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application 技 - PWM applications - Load switch k - Power management Marking 源特科rce Te PDFN3.3x3.3-8L 矽 u Absolute Maximum Ratings (TC=25℃ unless otherwise noted) o Parameter Drain-Source Voltage S Gate-Source Voltage ip Drain Current-Continuous Drain Current-Continuous ( TC=100℃ ) h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID ID IDM PD Rating -30 ±20 -9 -6 -36 17 Unit V V A A A W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Case (Note 2) RθJC ℃/W TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://.Chip Source Tek. E-mail: Tony.Wang@.Chip Source Tek. In Fo@Chip Source Tek. Page 1 2021 Feb. v1.1 Electrical Characteristics (TC =25℃ unless otherwise noted) Parameter...