Datasheet Summary
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General Purpose Transistor
SMD Diodes Specialist
MMBT3906-G (PNP)
RoHS Device
Features
-Epitaxial planar die construction -As plementary type, the NPN transistor MMBT3904-G is remended
0.056 (1.40) 0.047 (1.20)
SOT-23
0.119 (3.00) 0.110 (2.80)
0.083 (2.10)
0.066 (1.70) 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20)
Collector 3
0.044 (1.10) 0.035 (0.90)
1 Base
0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 0.007 (0.20) min
2 Emitter
Dimensions in inches and (millimeter)
Maximum Ratings(at T A =25 C unless otherwise noted)
Parameter
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-Continuous Col lec tor di...
