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MMBT3906-G - GENERAL PURPOSE TRANSISTORS

Key Features

  • -Epitaxial planar die construction -As complementary type, the NPN transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 2 0.066 (1.70) 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 0.044 (1.10) 0.035 (0.90) 1 Base 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 0.007 (0.20) min 2 Emitter O Dimensions in inches and (millimeter) Maximum Ratings(at T A =25 C unless otherwise noted) Parameter Collector-Base voltage C.

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Datasheet Details

Part number MMBT3906-G
Manufacturer Comchip Technology
File Size 146.10 KB
Description GENERAL PURPOSE TRANSISTORS
Datasheet download datasheet MMBT3906-G Datasheet

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www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMBT3906-G (PNP) RoHS Device Features -Epitaxial planar die construction -As complementary type, the NPN transistor MMBT3904-G is recommended 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 2 0.066 (1.70) 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 0.044 (1.10) 0.035 (0.90) 1 Base 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 0.007 (0.