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CY62147CV33 - 256K x 16 Static RAM

Download the CY62147CV33 datasheet PDF. This datasheet also covers the CY62147CV25 variant, as both devices belong to the same 256k x 16 static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

of read and write modes.

The CY62147CV25/30/33 are available in a 48-ball FBGA package.

The CY62147CV25/30/33 are high-performance CMOS static RAMs organized as 256K words by 16 bits.

Key Features

  • High Speed.
  • 55 ns and 70 ns availability.
  • Voltage range:.
  • CY62147CV25: 2.2V.
  • 2.7V.
  • CY62147CV30: 2.7V.
  • 3.3V.
  • CY62147CV33: 3.0V.
  • 3.6V.
  • Pin Compatible with CY62147V.
  • Ultra-low active power.
  • Typical active current: 1.5 mA @ f = 1 MHz.
  • Typical active current: 5.5 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE featur.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62147CV25_CypressSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
47V CY62147CV25/30/33 MoBL™ 256K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Voltage range: — CY62147CV25: 2.2V–2.7V — CY62147CV30: 2.7V–3.3V — CY62147CV33: 3.0V–3.6V • Pin Compatible with CY62147V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz • • • • — Typical active current: 5.5 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power cantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH).