CY62157H Datasheet | Cypress

CY62157H MoBL® 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code (ECC) Features - Ultra-low standby current - Typical standby current: 5.5A - Maximum standby current: 16 A - High speed: 45 ns - Voltage range: 2.2 V to 3.6 V - Embedded Error-Correcting Code (ECC) for single-bit error correction - 1.0 V data retention - Transistor-transistor logic (TTL) patible inputs and outputs - Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages Functional Description CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code. ECC logic can detect and...