CY62157H Datasheet 8-Mbit (512K words x 16 bit) Static RAM

Manufacturer: Cypress (now Infineon)

Overview: CY62157H MoBL® 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code.

📥 Download Datasheet

CY62157H 8-mbit (512k words x 16 bit) static ram by Cypress (now Infineon) - Datasheet Preview

Datasheet Details

Part number	CY62157H
Manufacturer	Cypress (now Infineon)
File Size	373.12 KB
Description	8-Mbit (512K words x 16 bit) Static RAM
Download	CY62157H Download (PDF)

General Description

CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code.

ECC logic can detect and correct single bit error in accessed location.

This device is offered in dual chip enable option.

Key Features

Ultra-low standby current.
Typical standby current: 5.5A.
Maximum standby current: 16 A.
High speed: 45 ns.
Voltage range: 2.2 V to 3.6 V.
Embedded Error-Correcting Code (ECC) for single-bit error correction.
1.0 V data retention.
Transistor-transistor logic (TTL) compatible inputs and outputs.
Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages Functional.

More Datasheets from Cypress (now Infineon)

Part Number	Description
CY62157CV25	512K x 16 Static RAM
CY62157CV30	512K x 16 Static RAM
CY62157CV33	512K x 16 Static RAM
CY62157DV18	8M (512K x 16) Static RAM
CY62157DV20	8M (512K x 16) Static RAM
CY62157DV30	8-Mbit (512K x 16) MoBL Static RAM
CY62157E	8-Mbit (512 K x 16) Static RAM
CY62157ESL	8-Mbit (512 K x 16) Static RAM
CY62157EV18	8-Mbit (512 K x 16) Static RAM
CY62157EV30	8-Mbit (512 K x 16) Static RAM