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CY62157H Datasheet

Manufacturer: Cypress (now Infineon)
CY62157H datasheet preview

Datasheet Details

Part number CY62157H
Datasheet CY62157H-CypressSemiconductor.pdf
File Size 373.12 KB
Manufacturer Cypress (now Infineon)
Description 8-Mbit (512K words x 16 bit) Static RAM
CY62157H page 2 CY62157H page 3

CY62157H Overview

CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code. ECC logic can detect and correct single bit error in accessed location. This device is offered in dual chip enable option.

CY62157H Key Features

  • Ultra-low standby current
  • Typical standby current: 5.5A
  • Maximum standby current: 16 A
  • High speed: 45 ns
  • Voltage range: 2.2 V to 3.6 V
  • Embedded Error-Correcting Code (ECC) for single-bit error
  • 1.0 V data retention
  • Transistor-transistor logic (TTL) patible inputs and outputs
  • Available in Pb-free 48-ball VFBGA and 48-pin TSOP I
  • CE1 as LOW and CE2 as HIGH
Cypress (now Infineon) logo - Manufacturer

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CY62157H Distributor

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