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CY62157H - 8-Mbit (512K words x 16 bit) Static RAM

Description

CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code.

ECC logic can detect and correct single bit error in accessed location.

This device is offered in dual chip enable option.

Features

  • Ultra-low standby current.
  • Typical standby current: 5.5A.
  • Maximum standby current: 16 A.
  • High speed: 45 ns.
  • Voltage range: 2.2 V to 3.6 V.
  • Embedded Error-Correcting Code (ECC) for single-bit error correction.
  • 1.0 V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages Functional.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62157CV25 512K x 16 Static RAM
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CY62157DV18 8M (512K x 16) Static RAM
CY62157DV20 8M (512K x 16) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62157H MoBL® 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code (ECC) 8-Mbit (512K words × 16-bit) Static RAM with Error-Correcting Code (ECC) Features ■ Ultra-low standby current ❐ Typical standby current: 5.5A ❐ Maximum standby current: 16 A ■ High speed: 45 ns ■ Voltage range: 2.2 V to 3.6 V ■ Embedded Error-Correcting Code (ECC) for single-bit error correction ■ 1.0 V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ Available in Pb-free 48-ball VFBGA and 48-pin TSOP I packages Functional Description CY62157H is a high-performance CMOS low-power (MoBL) SRAM device with Embedded Error-Correcting Code. ECC logic can detect and correct single bit error in accessed location. This device is offered in dual chip enable option.
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