Datasheet4U Logo Datasheet4U.com

CY7C1034DV33 - 6-Mbit (256K x 24) Static RAM

Description

The CY7C1034DV33 is a high performance CMOS static RAM organized as 256K words by 24 bits.

This device has an automatic power-down feature that significantly reduces power consumption when deselected.

Features

  • High speed.
  • tAA = 10 ns.
  • Low active power.
  • ICC = 175 mA at f = 100 MHz.
  • Low CMOS standby power.
  • ISB2 = 25 mA.
  • Operating voltages of 3.3 ± 0.3 V.
  • 2.0 V data retention.
  • Automatic power-down when deselected.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • Easy memory expansion with CE1, CE2, and CE3 features.
  • Available in Pb-free standard 119-Ball PBGA Functional.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CY7C1006D 1-Mbit (256K x 4) Static RAM Cypress
CY7C1011G 2-Mbit (128K words x 16 bit) Static RAM Cypress
CY7C1041G 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY7C1041GE 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY7C1041GN 4-Mbit (256K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C1006B 256K x 4 Static RAM
CY7C1007 (CY7C107 / CY7C1007) 1M x 1 Static RAM
CY7C1007D 1-Mbit (1 M x 1) Static RAM
CY7C1009 Straight 1-Row BergStik II Headers
CY7C1009B 128K x 8 Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY7C1034DV33 6-Mbit (256K X 24) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 175 mA at f = 100 MHz ■ Low CMOS standby power ❐ ISB2 = 25 mA ■ Operating voltages of 3.3 ± 0.3 V ■ 2.0 V data retention ■ Automatic power-down when deselected ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ Easy memory expansion with CE1, CE2, and CE3 features ■ Available in Pb-free standard 119-Ball PBGA Functional Description The CY7C1034DV33 is a high performance CMOS static RAM organized as 256K words by 24 bits. This device has an automatic power-down feature that significantly reduces power consumption when deselected. To write to the device, enable the chip (CE1 LOW, CE2 HIGH, and CE3 LOW) while forcing the Write Enable (WE) input LOW.
Published: |