Datasheet Summary
PRELIMINARY
512K x 8 Static RAM
Features
- High speed
- t AA = 15 ns
- Low active power
- 1210 mW (max.)
- Low CMOS standby power (mercial L version)
- 2.75 mW (max.)
- 2.0V Data Retention (400 µW at 2.0V retention)
- Automatic power-down when deselected
- TTL-patible inputs and outputs
- Easy memory expansion with CE and OE Features is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers. Writing to the device is acplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18). Reading...
