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CY7C1049BV33 - 512K x 8 Static RAM

General Description

The CY7C1049BV33 is a high-performance CMOS Static RAM organized as 524,288 words by 8 bits.

Key Features

  • High speed.
  • tAA = 15 ns.
  • Low active power.
  • 504 mW (max. ).
  • Low CMOS standby power (Commercial L version).
  • 1.8 mW (max. ).
  • 2.0V Data Retention (660 µW at 2.0V retention) www. DataSheet4U. com.
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs.
  • Easy memory expansion with CE and OE features expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-s.

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Other Datasheets by Cypress (now Infineon)

Part Number Description
CY7C1049B 512K x 8 Static RAM
CY7C1049BN 512K x 8 Static RAM
CY7C1049BNV33 512K x 8 Static RAM
CY7C1049 512K x 8 Static RAM
CY7C1049 512K x 8 Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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049BV33 CY7C1049BV33 512K x 8 Static RAM Features • High speed — tAA = 15 ns • Low active power — 504 mW (max.) • Low CMOS standby power (Commercial L version) — 1.8 mW (max.) • 2.0V Data Retention (660 µW at 2.0V retention) www.DataSheet4U.com • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE features expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).