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CY7C1353G - 4-Mbit (256K x 18) Flow-Through SRAM

Datasheet Summary

Description

The CY7C1353G is a 3.3 V, 256K × 18 synchronous flow-through burst SRAM designed specifically to suppo

Features

  • Supports up to 100-MHz bus operations with zero wait states.
  • Data is transferred on every clock.
  • Pin compatible and functionally equivalent to ZBT™ devices.
  • Internally self timed output buffer control to eliminate the need to use OE.
  • Registered inputs for flow-through operation.
  • Byte write capability.
  • 256K × 18 common I/O architecture.
  • 2.5 V/3.3 V I/O power supply (VDDQ).
  • Fast clock-to-output times.
  • 8.0 ns (for 100-MHz device).
  • Clock enable.

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Datasheet preview – CY7C1353G

Datasheet Details

Part number CY7C1353G
Manufacturer Cypress Semiconductor
File Size 742.00 KB
Description 4-Mbit (256K x 18) Flow-Through SRAM
Datasheet download datasheet CY7C1353G Datasheet
Additional preview pages of the CY7C1353G datasheet.

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Full PDF Text Transcription

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CY7C1353G 4-Mbit (256K × 18) Flow-Through SRAM with NoBL™ Architecture 4-Mbit (256K × 18) Flow-Through SRAM with NoBL™ Architecture Features ■ Supports up to 100-MHz bus operations with zero wait states ❐ Data is transferred on every clock ■ Pin compatible and functionally equivalent to ZBT™ devices ■ Internally self timed output buffer control to eliminate the need to use OE ■ Registered inputs for flow-through operation ■ Byte write capability ■ 256K × 18 common I/O architecture ■ 2.5 V/3.3 V I/O power supply (VDDQ) ■ Fast clock-to-output times ❐ 8.
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