CY7C1411BV18 - (CY7C14xxBV18) 36-Mbit QDR-II SRAM 4-Word Burst Architecture

This page provides the datasheet information for the CY7C1411BV18, a member of the CY7C1413BV18 (CY7C14xxBV18) 36-Mbit QDR-II SRAM 4-Word Burst Architecture family.

Product Overview

Cypress Semiconductor

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Datasheet Details

Part number	CY7C1411BV18
Manufacturer	Cypress Semiconductor
File Size	757.79 KB
Description	(CY7C14xxBV18) 36-Mbit QDR-II SRAM 4-Word Burst Architecture
Datasheet	CY7C1411BV18 Datasheet
Additional preview pages of the CY7C1411BV18 datasheet.

CY7C1411BV18 Product details

Description

The CY7C1411BV18, CY7C1426BV18, CY7C1413BV18, and CY7C1415BV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR™-II architecture.

QDR-II architecture consists of two separate ports to access the memory array.

Features

Configurations CY7C1411BV18.
4M x 8 CY7C1426BV18.
4M x 9 CY7C1413BV18.
2M x 18 CY7C1415BV18.
1M x 36 Separate independent read and write data ports.
Supports concurrent transactions 300 MHz clock for high bandwidth 4-word burst for reducing address bus frequency Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 600 MHz) at 300 MHz Two input clocks (K and K) for precise DDR timing.
SRAM uses rising edges only.

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Published: Feb 26, 2010 |