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CY7C1425KV18 Datasheet

Manufacturer: Cypress (now Infineon)
CY7C1425KV18 datasheet preview

CY7C1425KV18 Details

Part number CY7C1425KV18
Datasheet CY7C1425KV18-CypressSemiconductor.pdf
File Size 1.26 MB
Manufacturer Cypress (now Infineon)
Description 36-Mbit QDR II SRAM Two-Word Burst Architecture
CY7C1425KV18 page 2 CY7C1425KV18 page 3

CY7C1425KV18 Overview

CY7C1425KV18 CY7C1412KV18 CY7C1414KV18 36-Mbit QDR® II SRAM Two-Word Burst Architecture 36-Mbit QDR® II SRAM Two-Word Burst.

CY7C1425KV18 Key Features

  • Separate independent read and write data ports
  • Supports concurrent transactions
  • 333 MHz clock for high bandwidth
  • Two-word burst on all accesses
  • Double data rate (DDR) Interfaces on both read and write ports
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Two input clocks for output data (C and C) to minimize clock
  • Echo clocks (CQ and CQ) simplify data capture in high speed
  • Single multiplexed address input bus latches address inputs

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