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CY7C1475V25 - (CY7C147xV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM

This page provides the datasheet information for the CY7C1475V25, a member of the CY7C1471V25 (CY7C147xV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM family.

Datasheet Summary

Description

The CY7C1471V25, CY7C1473V25 and CY7C1475V25 are 2.5V, 2M x 36/4M x 18/1M x 72 Synchronous Flow-through Burst SRAMs designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states.

Features

  • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles.
  • Can support up to 133-MHz bus operations with zero wait states.
  • Data is transferred on every clock.
  • Pin compatible and functionally equivalent to ZBT™ devices.
  • Internally self-timed output buffer control to eliminate the need to use OE.
  • Registered inputs for flow-through operation.
  • Byte Write capability.
  • 2.5V/1.8V I/O power supply.

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Datasheet preview – CY7C1475V25

Datasheet Details

Part number CY7C1475V25
Manufacturer Cypress Semiconductor
File Size 428.71 KB
Description (CY7C147xV25) 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM
Datasheet download datasheet CY7C1475V25 Datasheet
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www.DataSheet4U.com PRELIMINARY CY7C1471V25 CY7C1473V25 CY7C1475V25 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM with NoBL™ Architecture Features • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles. • Can support up to 133-MHz bus operations with zero wait states • Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through operation • Byte Write capability • 2.5V/1.8V I/O power supply • Fast clock-to-output times — 6.5 ns (for 133-MHz device) — 8.
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