CY7C1916KV18

CY7C1916KV18 is 18-Mbit DDR II SRAM Two-Word Burst Architecture manufactured by Cypress.

CY7C1916KV18 Datasheet

Part number	CY7C1916KV18
Download	CY7C1916KV18 Datasheet (PDF)
File Size	1.45 MB
Manufacturer	Cypress
Description	18-Mbit DDR II SRAM Two-Word Burst Architecture

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Part Number	Description
CY7C1916BV18	18-Mbit DDR-II SRAM 2-Word Burst Architecture
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CY7C1916JV18	18-Mbit DDR-II SRAM 2-Word Burst Architecture
CY7C1910BV18	1.8V Synchronous Pipelined SRAM
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CY7C1916KV18 Description

The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K.

CY7C1916KV18 Key Features

2 M × 8 CY7C1916KV18
2 M × 9 CY7C1318KV18
1 M × 18 CY7C1320KV18
512 K × 36
SRAM uses rising edges only Two input clocks for output data (C and C) to minimize clock skew and flight time mismatches
Supports both 1.5 V and 1.8 V I/O supply Available in 165-ball FBGA package (13 × 15 × 1.4 mm) Offered in both Pb-free a

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