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GVT71256B36 - (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM

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Cypress Semiconductor

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GVT71256B36 (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM by Cypress Semiconductor - Datasheet Preview — Datasheet preview – GVT71256B36

Datasheet Details

Part number	GVT71256B36
Manufacturer	Cypress Semiconductor
File Size	791.54 KB
Description	(GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
Datasheet	GVT71256B36 Datasheet
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Product details

Description

The Cypress Synchronous Burst SRAM family employs highspeed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology.

Features

Fast access times: 6.0, 6.5, 7.0, and 8.0 ns Fast clock speed: 150, 133, 117, and 100 MHz 1 ns set-up time and hold time Fast OE access times: 3.5 ns and 4.0 ns 3.3V.
5% and +10% power supply 3.3V or 2.5V I/O supply 5V tolerant inputs except I/Os Clamp diodes to VSS at all inputs and outputs Common data inputs and data outputs Byte Write Enable and Global Write control Multiple c.

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Published: Apr 13, 2006 |