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GVT71256ZC36 Datasheet

Manufacturer: Cypress (now Infineon)
GVT71256ZC36 datasheet preview

Datasheet Details

Part number GVT71256ZC36
Datasheet GVT71256ZC36_CypressSemiconductor.pdf
File Size 597.12 KB
Manufacturer Cypress (now Infineon)
Description (GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture
GVT71256ZC36 page 2 GVT71256ZC36 page 3

GVT71256ZC36 Overview

) CY7C1354A/GVT71256ZC36 CY7C1356A/GVT71512ZC18 256K x 36/512K x 18 Pipelined SRAM with NoBL™ Architecture.

GVT71256ZC36 Key Features

  • Zero Bus Latency, no dead cycles between Write and Read cycles
  • Fast clock speed: 200, 166, 133, 100 MHz
  • Fast access time: 3.2, 3.6, 4.2, 5.0 ns
  • Internally synchronized registered outputs eliminate the need to control OE
  • Single 3.3V -5% and +5% power supply VCC
  • Separate VCCQ for 3.3V or 2.5V I/O
  • Single WEN (Read/Write) control pin
  • Positive clock-edge triggered, address, data, and control signal registers for fully pipelined
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Part Number Description
GVT71256ZB36 (GVT7xxxx) 256K x 36 / 512K x 18 Flow Thru SRAM
GVT71256B36 (GVT7xxxx) 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
GVT71256C36 (GVT7xxxx) 256K X 36/512K X 18 Pipelined SRAM
GVT71256D36 (GVT7xxxx) 256K x 36 / 512K x 18 Pipelined SRAM
GVT71256E18 (GVT71256E18 / GVT7C1325A) 256K x 18 Synchronous Flow Through Burst SRAM
GVT71256T18 (GVT71256T18 / GVT7C1359A) 256K X 18 Synchronous-pipelined Cache Tag RAM
GVT71512B18 256K x 36 / 512K x 18 Sunchronous Burse Flowthrough SRAM
GVT71512C18 256K X 36/512K X 18 Pipelined SRAM
GVT71512D18 256K x 36 / 512K x 18 Pipelined SRAM
GVT71512ZB18 256K x 36 / 512K x 18 Flow Thru SRAM

GVT71256ZC36 Distributor

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