CY7C106D Description
The CY7C106D [1] and CY7C1006D [1] are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers. These devices have an automatic power-down.
CY7C106D Key Features
- Pin- and function-patible with CY7C106B/CY7C1006B
- High speed
- tAA = 10 ns
- Low active power
- ICC = 80 mA @ 10 ns
- Low CMOS standby power
- ISB2 = 3.0 mA
- 2.0 V Data Retention
- Automatic power-down when deselected
- CMOS for optimum speed/power