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CY7C106D - 1-Mbit (256K x 4) Static RAM

General Description

The CY7C106D [1] and CY7C1006D [1] are high-performance CMOS static RAMs organized as 262,144 words by 4 bits.

Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers.

Key Features

  • Pin- and function-compatible with CY7C106B/CY7C1006B.
  • High speed.
  • tAA = 10 ns.
  • Low active power.
  • ICC = 80 mA @ 10 ns.
  • Low CMOS standby power.
  • ISB2 = 3.0 mA.
  • 2.0 V Data Retention.
  • Automatic power-down when deselected.
  • CMOS for optimum speed/power.
  • TTL-compatible inputs and outputs.
  • CY7C106D available in Pb-free 28-pin 400-Mil wide Molded SOJ package. CY7C1006D available in Pb-free 28-pin 300-Mil wide Molded SOJ package Functional Descr.

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CY7C106D CY7C1006D 1-Mbit (256 K × 4) Static RAM 1-Mbit (256 K × 4) Static RAM Features ■ Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA ■ 2.0 V Data Retention ■ Automatic power-down when deselected ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C106D available in Pb-free 28-pin 400-Mil wide Molded SOJ package. CY7C1006D available in Pb-free 28-pin 300-Mil wide Molded SOJ package Functional Description The CY7C106D [1] and CY7C1006D [1] are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state drivers.