CY7C2663KV18 Description
CY7C2663KV18/CY7C2665KV18 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT 144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT.
CY7C2663KV18 Key Features
- Separate independent read and write data ports
- Supports concurrent transactions
- 550-MHz clock for high bandwidth
- Four-word burst for reducing address bus frequency
- Double data rate (DDR) interfaces on both read and write ports
- Available in 2.5-clock cycle latency
- Two input clocks (K and K) for precise DDR timing
- Static random access memory (SRAM) uses rising edges only
- Echo clocks (CQ and CQ) simplify data capture in high-speed systems
- Data valid pin (QVLD) to indicate valid data on the output