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BTA1952E3 - PNP Transistor

Features

  • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A.
  • Excellent DC current gain characteristics.
  • Wide SOA Symbol BTA1952E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single Pulse Pw=10ms Symbol VCBO VCEO VEBO IC(DC) IC(Pulse).

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Datasheet Details

Part number BTA1952E3
Manufacturer Cystech Electonics Corp
File Size 261.67 KB
Description PNP Transistor
Datasheet download datasheet BTA1952E3 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C601E3-A Issued Date : 2004.09.16 Revised Date : Page No. : 1/4 BTA1952E3 Features • Low VCE(sat), VCE(sat)=-0.5 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA Symbol BTA1952E3 Outline TO-220AB B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Note : *1.
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