BTA1952I3 Datasheet PDF (PNP Transistor) | Download Cystech Electonics Corp BTA1952I3

BTA1952I3 - PNP Transistor

Features

BVCEO IC RCESAT -100V -5A 150mΩ.
Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A.
Excellent DC current gain characteristics.
Wide SOA.
Complementary to BTC5103I3.
RoHS compliant package Symbol BTA1952I3 Outline TO-251 B：Base C：Collector E：Emitter B B CCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature.

Datasheet Details

Part number	BTA1952I3
Manufacturer	Cystech Electonics Corp
File Size	271.02 KB
Description	PNP Transistor
Datasheet	BTA1952I3 Datasheet
Additional preview pages of the BTA1952I3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C601I3 Issued Date : 2005.10.14 Revised Date : 2009.02.04 Page No. : 1/ 5 BTA1952I3 Features BVCEO IC RCESAT -100V -5A 150mΩ • Low VCE(sat), VCE(sat)=-0.45 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics • Wide SOA • Complementary to BTC5103I3 • RoHS compliant package Symbol BTA1952I3 Outline TO-251 B：Base C：Collector E：Emitter B B CCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1.

Published: Mar 9, 2010 |