High BVCEO
High current capability
Symbol
BTB1236AE3
Outline
TO-220AB
B:Base C:Collector E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Di
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CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C854E3
Issued Date : 2004.07.28
Revised Date : Page No. : 1/4
BTB1236AE3
Description
• High BVCEO • High current capability
Symbol
BTB1236AE3
Outline
TO-220AB
B:Base C:Collector E:Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -180 -160 -5 -1.5 -3 2 20 150 -55~+150 Unit V V V A A W W °C °C
BTB1236AE3
CYStek Product Specification
CYStech Electronics Corp.