High BVCEO
High current capability
Symbol
BTB1236AL3
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TC=25℃ Junct
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CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C854L3
Issued Date : 2004.07.28
Revised Date : Page No. : 1/4
BTB1236AL3
Description
• High BVCEO • High current capability
Symbol
BTB1236AL3
B：Base C：Collector E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -180 -160 -5 -1.5 -3 5 150 -55~+150 Unit V V V A A W °C °C
BTB1236AL3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min.
BTB1236AL3 Datasheet
