High BVCEO
High current capability
Pb-free package
Symbol
BTB1236AT3
Outline
TO-126
B：Base C：Collector E：Emitter
E CB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date :2006.07.11 Page No. : 1/4
BTB1236AT3
Description
• High BVCEO • High current capability • Pb-free package
Symbol
BTB1236AT3
Outline
TO-126
B：Base C：Collector E：Emitter
E CB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @TA=25℃ Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits -180 -160 -5 -1.5 -3 0.5 1 20 150 -55~+150 Unit V V V A A A W °C °C
BTB1236AT3
CYStek Product Specification
CYStech Electronics Corp.
BTB1236AT3 Datasheet
