The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C854M3
Issued Date : 2004.08.20
Revised Date : Page No. : 1/4
BTB1236AM3
Description
• High BVCEO • High current capability
Symbol
BTB1236AM3
Outline
SOT-89
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP PD Limits -180 -160 -5 -1.5 -3 0.6 1 2 Unit V V V A A W W W °C/W °C/W °C/W °C °C
(Note 1) (Note 2) (Note 3)
Thermal Resistance, Junction to Ambient
RθJA
208 125 (Note 2) 62.5 (Note 3)
Junction Temperature Storage Temperature
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.