BTA54S2 Datasheet | Cystech Electonics

Description .. Planar silicon Schottky barrier diode encapsulated in a SOD-323 very small plastic SMD package. Features - Guard ring protected - Low forward voltage drop - Very small plastic SMD package Applications - Ultra high-speed switching - Voltage clamping - Protection circuits - Blocking diodes Symbol Outline SOD-323 BAT54S2 BAT54S2 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings Symbol VR IF IFRM IFSM Ptot Tstg .. Tj Tamb Parameter continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature Conditions Spec. No. : C302S Issued Date : 2004.11.26 Revised Date : Page No. : 2/4 tp≤1s, δ≤0.5 tp<10ms Tamb≤25℃ Min -65 -65 Max 30 200 300 600 200 +150 125 +125 Unit V m A m A m A m W ℃ ℃ ℃ Characteristics (Ta=25°C, unless otherwise specified) Parameter Reverse Breakdown Voltage Symbol VBR VF(1) VF(2) Forward Voltage (Note 1) VF(3) VF(4) VF(5) Reverse Leakage Current (Note 2) Diode Capacitance Reverse Recovery Time IR CD trr IR=100µA IF=0.1m A IF=1m A IF=10m A IF=30m A IF=100m A VR=25V VR=1V, f=1MHz when switched from IF= 10m A to IR=10m A; RL=100Ω; measured at IR=1m A Condition Min. 30 Max. 240 320 400 500 800 2 10 5 Unit V m V m V m V m V m V µA p F ns Notes: 1.pulse test, tp=380µs, duty cycle<2%. 2.pulse test, tp=300µs, duty cycle<2%. Thermal Characteristics Symbol Rth j-a Parameter thermal resistance from junction to ambient Conditions note 1 Value 635 Unit K/W Note 1 : Device mounted on a FR-4...