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CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD2510F3
Spec. No. : C603F3 Issued Date : 2011.06.08 Revised Date : Page No. : 1/6
Description
The BTD2510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.
Features:
•High BVCEO •Low VCE(SAT) •High current gain •Monolithic construction with built-in base-emitter shunt resistors •Pb-free lead plating package
Equivalent Circuit
BTD2510F3
B
R1≈4k R2≈60
B：Base C：Collector E：Emitter
E
C
Outline
TO-263
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range Storage Temperature Range Note : *1.
BTD2510F3 Datasheet
