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BTD2012FP - NPN Epitaxial Planar Transistor

Key Features

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  • Low collector-to-emitter saturation voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A.
  • Excellent DC current gain characteristics.
  • High allowable power dissipation, PD=25W(TC=25℃).
  • Large current capability.
  • Pb-free package.

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Datasheet Details

Part number BTD2012FP
Manufacturer Cystech Electonics
File Size 208.05 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2012FP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 1/ 5 BTD2012FP Features www.DataSheet4U.com • Low collector-to-emitter saturation voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A • Excellent DC current gain characteristics • High allowable power dissipation, PD=25W(TC=25℃) • Large current capability • Pb-free package Applications • DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Symbol BTD2012FP Outline TO-220FP B：Base C：Collector E：Emitter B C E BTD2012FP CYStek Product Specification CYStech Electronics Corp.