BTD2012FP Datasheet | Cystech Electonics

Features .. - Low collector-to-emitter saturation voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A - Excellent DC current gain characteristics - High allowable power dissipation, PD=25W(TC=25℃) - Large current capability - Pb-free package Applications - DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Symbol Outline TO-220FP B：Base C：Collector E：Emitter CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current .. Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD PD RθJA RθJC Visol Tj Tstg Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 2/ 5 Limits 80 60 6 3 6 (Note 1) 0.5 2 25 62.5 5 1000 150 -55~+150 Unit V V V A A W °C/W °C/W V °C °C Note : 1. Single Pulse , Pw≦380µs,Duty≦2%. Characteristics (Ta=25°C) Symbol BVCBO - BVCEO BVEBO ICBO IEBO - VCE(sat) 1 - VCE(sat) 2 - VBE(sat) - VBE(on) - h FE 1 - h FE 2 f T Cob Min. 80 60 6 120 60 Typ. 150 250 1 100 15 Max. 1 1 220 350 1.2 1 560 Unit V V V µA µA m V m V V V MHz p F Test Conditions IC=10µA, IE=0 IC=1m A, IB=0 IC=10µA, IC=0 VCB=80V, IE=0 VEB=4V, IC=0 IC=1A, IB=50m A IC=2A, IB=200m A IC=2A, IB=100m A VCE=2V, IC=500m A VCE=5V, IC=500m A VCE=5V, IC=3A VCE=5V, IC=500m A,f=5MHz VCB=10V, f=1MHz - Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% Classification of h FE 1 Rank Range Q 120~270 R 180~390 S 270~560 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 1000 Saturation Voltage---(m V) 1000 Spec. No. : C822FP Issued Date : 2005.07.29 Revised Date : Page No. : 3/ 5 Saturation...