BTD2012FP Description
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. 2005.07.29 Revised Date.
BTD2012FP Key Features
- Low collector-to-emitter saturation voltage, typically VCE(SAT)=0.25V at IC / IB=2A / 0.2A
- Excellent DC current gain characteristics
- High allowable power dissipation, PD=25W(TC=25℃)
- Large current capability
- Pb-free package