BTD2057A3 Datasheet | Cystech Electonics

Description - High BVCEO - High current capability - Pb-free package Symbol Outline TO-92 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 200 200 5 1.5 3 750 150 -55~+150 Unit V V V A A m W °C °C CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO .. - VCE(sat) - VBE(on) h FE1 h FE2 f T Cob Min. 200 200 5 0.45 82 30 Typ. 140 27 Max. 1 1 0.6 0.8 390 Unit V V V µA µA V V MHz p F Spec. No. : C855A3-A Issued Date : 2005.04.29 Revised Date : Page No. : 2/4 Test Conditions IC=50µA, IE=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100m A VCE=5V, IC=5m A VCE=5V, IC=200m A VCE=5V, IC=500m A VCE=5V, IC=150m A VCB=10V, IE=0, f=1MHz - Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification of h FE 1 Rank Range P 82~180 Q 120~270 R 180~390 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current VCE=5V Tj=125℃ Spec. No. : C855A3-A Issued Date : 2005.04.29 Revised Date : Page No. : 3/4 Saturation Voltage vs Collector Current VCE(SAT)@IC=10IB .. 100 Saturation Voltage---(m V) Current Gain---HFE Tj=125℃ Tj=75℃ Tj=75℃ Tj=25℃ Tj=25℃ 10 1 10 100 1000 Collector Current---IC(m A)...