High BVCEO
High current capability
Pb-free package
Symbol
BTD2057A3
Outline
TO-92
B：Base C：Collector E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Cu
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
Silicon NPN Epitaxial Planar Transistor
Spec. No. : C855A3-A Issued Date : 2005.04.29 Revised Date : Page No. : 1/4
BTD2057A3
www.DataSheet4U.com
Description
• High BVCEO • High current capability • Pb-free package
Symbol
BTD2057A3
Outline
TO-92
B：Base C：Collector E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25℃ Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg Limits 200 200 5 1.5 3 750 150 -55~+150 Unit V V V A A mW °C °C
BTD2057A3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO www.DataSheet4U.
BTD2057A3 Datasheet
