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BTD2061FP - NPN Epitaxial Planar Transistor

Key Features

  • Low saturation voltage, typically VCE(sat)=0.25V at IC/IB=2A/0.2A.
  • Excellent DC current gain characteristics.
  • Wide SOA(safe operating area).
  • Pb-free package. Symbol BTD2061FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Res.

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Datasheet Details

Part number BTD2061FP
Manufacturer Cystech Electonics
File Size 215.65 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTD2061FP Datasheet

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Full PDF Text Transcription (Reference)

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CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD2061FP Spec. No. : C819FP Issued Date : 2005.09.07 Revised Date :2012.06.29 Page No. : 1/5 Features • Low saturation voltage, typically VCE(sat)=0.25V at IC/IB=2A/0.2A. • Excellent DC current gain characteristics. • Wide SOA(safe operating area). • Pb-free package. Symbol BTD2061FP Outline TO-220FP B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Note : 1. Single Pulse , Pw≦380μs,Duty≦2%.