BTN8050N3 Datasheet | Cystech Electonics

Description The BTN8050N3 is designed for general purpose low frequency amplifier applications. Features - High collector current , IC = 0.8A - Low VCE(sat), VCE(sat)=0.15V (typical), at IC / IB = 400m A / 20m A - plementary to BTP8550N3. Symbol Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Note : Single pulse, Pw=10ms Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits 30 20 5 800 1.5 (Note) 225 150 -55~+150 Unit V V V m A A W °C °C CYStek Product Specification CYStech Electronics Corp. .. Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO - VCE(sat) 1 - VCE(sat) 2 VBE(on) - h FE 1 - h FE 2 f T Cob Min. 30 20 5 100 80 Typ. 150 15 Max. 100 100 0.3 0.4 1 500 Unit V V V n A n A V V V MHz p F Test Conditions IC=50µA, IE=0 IC=1m A, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 IC=400m A, IB=20m A IC=800m A, IB=80m A VCE=1V, IC=150m A VCE=1V, IC=150m A VCE=2V, IC=800m A VCE=5V, IC=50m A, f=100MHz VCB=10V, f=1MHz - Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Classification Of h FE 1 Rank Range C 100~200 D 150~300 E 250~500 CYStek Product Specification CYStech Electronics Corp. .. Spec. No. : C223N3-H Issued Date : 2004.03.03 Revised Date : Page No. : 3/4 Characteristic...