BTN8050SA3
BTN8050SA3 is General Purpose NPN Epitaxial Planar Transistor manufactured by Cystech Electonics.
Description
The BTN8050SA3 is designed for use in output amplifier of portable radios in class B push pull operation.
- High collector current , IC = 700m A
- Low VCE(sat)
- plementary to BTP8550SA3.
Features
Symbol
Outline
TO-92
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB Pd Tj Tstg Limits 25 20 5 700 100 625 150 -55~+150 Unit V V V m A m A m W °C °C
CYStek Product Specification
CYStech Electronics Corp.
..
Spec. No. : C222A3 Issued Date : 2003.10.07
Revised Date : Page No. : 2/4
Characteristics (Ta=25°C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
- VCE(sat)
- VBE(on)
- h FE 1
- h FE 2 f T Cob Min. 25 20 6 100 150 Typ. 100 Max. 1 100 0.5 1 500 10 Unit V V V µA n A V V MHz p F Test Conditions IC=10µA IC=1m A IE=10µA VCB=20V VEB=5V IC=500m A, IB=50m A VCE=1V, IC=150m A VCE=1V, IC=150m A VCE=1V, IC=500m A VCE=10V, IC=20m A, f=100MHz VCB=10V, f=1MHz
- Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of h FE 1
Rank Range C 100~180 D 160~300 E 250~500
CYStek Product Specification
CYStech Electronics Corp.
..
Spec. No. : C222A3 Issued Date :...