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MTB020A03KV8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB020A03KV8 Outline D2 D2 D1 D1 DFN3×3 D1 D1 D2 D2 G:Gate S:Source D:Drain Pin 1 G2 S2 G1 S1 S1 G1 S2 G2 Ordering Information Device MTB020A03KV8-0-T6-G Package Shipping DFN3×3 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G fo.

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Datasheet Details

Part number MTB020A03KV8
Manufacturer Cystech Electonics
File Size 453.46 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020A03KV8 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C143V8 Issued Date : 2016.06.13 Revised Date : Page No. : 1/9 Dual N-Channel Enhancement Mode MOSFET MTB020A03KV8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDSON@VGS=10V typ. RDSON@VGS=4.5V typ. 30V 6.6A 12A 15.2 mΩ 20.