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MTB16P04J3 Datasheet P-channel Enhancement Mode Power MOSFET

Manufacturer: Cystech Electonics

Overview: CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET Spec. No. : C706J3 Issued Date : 2009.04.23 Revised Date : Page No.

Datasheet Details

Part number MTB16P04J3
Manufacturer Cystech Electonics
File Size 403.42 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet MTB16P04J3_CystechElectonics.pdf

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • RoHS compliant & Halogen-free package BVDSS ID RDSON(MAX) -40V -25A 16mΩ Equivalent Circuit MTB16P04J3 Outline TO-252 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
  • 1 Avalanche Current Avalanche Energy @ L=0.1mH,.

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